Pengaruh Variasi Temperatur Uji ZEM-3 pada Properti Termoelektrik Lapisan Tipis Ti-doped ZnO

Mujtahidatul Alawiyyah, Athorn Vora-Ud, Somporn Thaowankeaw, Tosawat Seetawan, Melania Suweni Muntini, Iim Fatimah
Submission Date: 2020-08-29 08:40:35
Accepted Date: 2021-02-03 09:38:38


Lapisan tipis Ti-doped ZnO berhasil difabrikasi pada substrat kaca SiO2 dengan menggunakan metode DC Magnetron Sputtering. Proses sputtering dilakukan dalam waktu 30 menit dan dengan tegangan sebesar 339-349 Volt. Lapisan tipis yang terbentuk memiliki ketebalan 241.287 nm. Uji properti termoelektrik dilakukan pada temperatur 310 K, 373 K, 423 K, 473 K, 523 K, 573 K, dan 623 K. Hasilnya, nilai resistivitas listrik lapisan tipis menurun hingga 523 K, dengan nilai resistivitas terendahnya adalah 0.446 ρ (mΩ m). Nilai koefisien Seebeck yang dihasilkan adalah minus menandakan bahwa lapisan tipis merupakan semikonduktor tipe n. Nilai koefisien Seebeck selalu meningkat seiring dengan pertambahan temperatur. Semakin tinggi temperatur yang diberlakukan pada material semikonduktor, maka makin tinggi pula faktor dayanya. Faktor daya paling tinggi terjadi pada temperatur 573 K dengan 32 µWm-1K2.


Properti Termoelektrik;Ti-doped ZnO; Uji ZEM-3.

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